Jang-Kwon Lim was born in Gwang-Ju, Korea, in 1979. He received the M.E. and the Ph.D. degrees in Electrical Engineering from the Korea University Seoul, Korea, in 2005 and from the Royal Institute of Technology (KTH), Stockholm, Sweden in 2015, respectively. From 2004 to 2005, he was a Research Fellow at Korea Electronics Technology Institute (KETI), Seongnam, Korea, where he was involved in the developments on MEMS-based pressure sensors for automotive module and medical applications. From 2005 to 2007, he was an Assistant Research Engineer with LG Materials/Components R&D center,
Ansan, Korea, where he was involved in GMR-based biosensors, micro coolers modules, and flexible displays. From 2008 to 2018, He was a Research Scientist at RISE Acreo AB, Kista, Sweden, where he was involved in several projects related to the research on SiC power devices and power electronics. From 2018 to 2020, he was a SiC Power Devices and Apps Engineer in ON Semiconductor Corporate R&D (Transic AB in Sweden site), where he had the responsibilities on the high voltage dynamic testings and the improvement on the switching performance for SiC MOSFETs which are dedicated to automotive markets. From 2020, he is back to RISE AB as a Senior Research Scientist and currently focusing on Wide band-gap semiconductor devices and power electronics applications. His expertise is device simulations, electrical characterizations (static, dynamic, and reliability testings), and apps testing.
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