Junho Lee is a Researcher in the System Integration unit within the department of Smart Hardware at RISE AB (Research Institutes of Sweden). He holds both B.S. and M.E. degrees in Electrical and Electronic Engineering from the Dongguk University-Seoul, Korea.
During his master's studies, his primary research focused on the structure design and optimization of GaN-on-SiC HEMT (High Electron Mobility Transistor) using TCAD simulation for both high-power and high-frequency applications. As part of his academic journey, he worked as a guest researcher at the Fraunhofer HHI Institute in Berlin, Germany. There, he contributed to the design of InP-based electro-optic Mach-Zehnder modulators for high-frequency applications using Ansys HFSS 3D simulation.
His master’s thesis was mainly centered on enhancing DC and RF characteristics of HEMT by applying diverse passivation materials and structures. He possesses extensive knowledge in power devices based on wide-bandgap semiconductors, with most of his research projects conducted in collaboration with ETRI (Electronics and Telecommunications Research Institute) in Korea.
Within RISE, his major research expertise includes high-voltage and high-current electrical characterizations, as well as TCAD simulations for power devices such as SiC, GaN, and Ga2O3. Currently, he is dedicated to the development of wide-bandgap power devices tailored for high-power applications. His research interests extend across various facets of power electronics, encompassing device packaging, materials, design, prediction, reliability, and even power system levels such as converters or inverters.