Ashutosh Kumar

Ashutosh Kumar is a Scientist at RISE Research Institutes of Sweden since October 2020. His research is focused on exploring III-V semiconducting materials and devices at varying dimensions, ranging from bulk to atomic-scale for various technological applications. Before joining RISE, he was a post-doctoral fellow at National Institute for Materials Science, Japan where he worked towards development of GaN-based devices with leading companies like Fuji Electric and Sony Corporation for high-power and solid-state lighting applications. His current research interest at RISE involves growth and processing of III-V materials followed by device fabrication and characterization. Kumar earned his doctorate degree in semiconductor physics from Indian Institute of Technology Delhi, India in 2016. During his doctoral studies, he was awarded with Deutscher Akademischer Austauschdienst (DAAD) fellowship to work on GaN nanostructures in Max Planck Institute for Science of Light, Germany for a period of six months. Till now, he has contributed to various research projects on nitride semiconductors which mainly includes electrical transport at metal/GaN interfaces, low-frequency noise characterizations, GaN nanostructures, graphene/GaN interfaces, microstructural and atomic-scale investigations of defects.